Radiation damage in Silicon

To investigate the behaviour of silicon detectors, a finite element simulation software type called TCAD is often employed. With TCAD one can solve the Poisson and charge transport equations on complex semiconductor geometries. To goal of this is to obtain quantities such as electric fields, signal generation caused by ionizing particles and leakage currents. Since silicon detectors used in high energy physics often are subjected to extremely harsh radiation environments, being able to predict changes in detector behaviour after irradiation is of high importance. Many experimental studies on irradiated detectors have been done, but to investigate the effect of radiation damage in simulation, a radiation damage model is needed.

During my time at CERN, under the supervision of Dr. Heinrich Schindler, I developed and proposed a new TCAD radiation damage model relevant for the extreme radiation levels that will be reached in the planned upgrade of the VELO detector at LHCb. I furthermore compared the model to experiment by measuring numerous irradiated prototype sensors used for VELO upgrade R&D. The work was published in Nuclear Instruments and Methods in Physics Research Section A.

  • TCAD paper
    Paper in NIMA presenting the proposed TCAD model.

Other work and presentations

Some other selected works and presentations carried out during the course of my studies are included below: