Effective modelling of hot QCD

Previous Research

Radiation Damage in Silicon

To investigate the behaviour of silicon detectors, a finite element simulation software type called TCAD is often employed. With TCAD one can solve the Poisson and charge transport equations on complex semiconductor geometries. To goal of this is to obtain quantities such as electric fields, signal generation caused by ionizing particles and leakage currents. Since silicon detectors used in high energy physics often are subjected to extremely harsh radiation environments, being able to predict changes in detector behaviour after irradiation is of high importance. Many experimental studies on irradiated detectors have been done, but to investigate the effect of radiation damage in simulation, a radiation damage model is needed. During my time at CERN I worked on a new TCAD radiation damage model relevant for the extreme radiation levels that will be reached in the planned upgrade of the VELO detector at LHCb. The work was published in Nuclear Instruments and Methods in Physics Research Section A.